Global GaN Power Device Market is expected to reach USD 4396.3 Million by 2026 from USD 334 Million in 2016 at a CAGR of 29.4%. Increasing use in consumer electronics and automotive verticals and increasing adoption of GaN radio frequency power device in the military, defense and aerospace vertical are some of the major factors driving the market growth.
The Global GaN Power Device Market based on device type has been segmented into power devices and RF power devices. RF power devices formed one of the major contributors for the market growth. Based on application, the GaN Power Device market has been segmented into power drives, supply and inverter, and radio frequency. Power drives formed one of the major contributors for the market growth.
Geographically, Global GaN Power Device Market has been segmented into Asia-Pacific, North America, Europe, Middle-East & Africa and Latin America. APAC is expected to hold one of the major shares for this market during the forecast period and is further assumed to maintain high growth as well. North America and Europe are expected to be other major regions for this market.
• Global GaN Power Device Market analysis and forecast, in terms of value.
• Comprehensive study and analysis of market drivers, restraints and opportunities influencing the growth of the GaN Power Device market.
• Global GaN Power Device Market segmentation on the basis of type, source, end-user, and region (country-wise) has been provided.
• GaN Power Device market strategic analysis with respect to individual growth trends, future prospects along with a contribution of various sub-market stakeholders have been considered under the scope of the study.
• Global GaN Power Device Market analysis and forecast for five major regions namely North America, Europe, Asia Pacific, the Middle East & Africa (MEA) and Latin America along with country-wise segmentation.
• Profiles of key industry players, their strategic perspective, market positioning and analysis of core competencies are further profiled.
• Competitive developments, investments, strategic expansion and competitive landscape of the key players operating in the GaN Power Device market are also profiled.
Bloomberg, Factiva, and Hoovers are some of the sites that are being referred to gain insights about Global GaN Power Device Market. Experts from top manufacturing companies along with other stakeholders have been considered. This is done to validate and collect critical information for evaluating trends related to this market during the forecast period. Top-down and bottom-up approaches have been used to estimate the global and regional size of this market. Data triangulation techniques along with other comparative analysis are also used to calculate the exact size of the Global GaN Power Device Market globally.
Key players in the Global GaN power device market include
• Cree (US)
• Qorvo (US)
• MACOM (US)
• Microsemi Corporation (US)
• Analog Devices US)
• Efficient Power Conversion (US)
• Integra Technologies (US)
• Transphorm (US)
• Navitas Semiconductor (US)
• GaN Systems (Canada)
Key Target Audience:
• End users of the GaN power device
• Integrated devices manufacturers (IDMs)
• Distributors and traders
• Technology providers
• Research organizations and consulting companies
• Associations, organizations, forums and alliances related to the GaN power device
• Venture capitalists, private equity firms and start-up companies
Years considered to estimate the market size of the GaN Power Device market have been mentioned below:
• Base year-2016
• Estimated year-2017
• Forecast year- 2017 to 2026
The scope of the Global GaN Power Device Market:
This research report segments the GaN Power Device market based on device type, voltage range, application, vertical and geography.
Global GaN Power Device Market, By Device Type:
• RF power
Global GaN Power Device Market, By Voltage Range:
• <200 Volt • 200–600 Volt • >600 Volt
Global GaN Power Device Market, By Application:
• Power Drivers
• Supply & Inverter
• Radio Frequency
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